IndiumV3, Main, Repository, bibRecord, 00EF73

Low-load deformation of InP under contact loading; comparison with GaAs

Identifieur interne : 00EF73 ( Main/Repository ); précédent : 00EF72; suivant : 00EF74

Low-load deformation of InP under contact loading; comparison with GaAs

Auteurs : RBID : Pascal:03-0038454

Descripteurs français

Pascal (Inist)
- Indentation, Nanoindentation, Plasticité, Rupture, Microscopie électronique transmission, Dislocation, Maclage, Zone plasticité, Semiconducteur, Indium phosphure, Gallium arséniure, Composé binaire, Etude expérimentale, As Ga, GaAs, 6220F, InP, In P, Indentation Berkovich.

English descriptors

KwdEn :
- Binary compounds, Dislocations, Experimental study, Gallium arsenides, Indentation, Indium phosphides, Nanoindentation, Plasticity, Plasticity zone, Ruptures, Semiconductor materials, Transmission electron microscopy, Twinning.

Abstract

Nanoindentation has been used to explore the plasticity onset under contact loading in InP. Under low indenting loads ranging between 0.2 and 10 mN, fracture of the sample is avoided and plastic zones can be observed by transmission electron microscopy. The zone-size variation with load could be measured and analysed using the work of Johnson and of Kramer et al. The results were compared with those obtained in GaAs deformed under the same conditions. Furthermore, characterization of the dislocations was made and it was shown that the twinning formation in InP differed strongly from that in GaAs. The results are compared with previously reported arrangements obtained in the microindentation domain.

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<author><name sortKey="Patriarche, G" uniqKey="Patriarche G">G. Patriarche</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures, Unité Propre de Recherche associée au CNRS, 196 Avenue Henri Ravera, BP 29</s1>
<s2>92222 Bagneux</s2>
<s3>FRA</s3>
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<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
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<author><name sortKey="Le Bourhis, E" uniqKey="Le Bourhis E">E. Le Bourhis</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Université de Poitiers, Laboratoire de Métallurgie Physique, Unité Mixte de Recherche associée au CNRS 6630, SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
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<country>France</country>
<placeName><region type="region" nuts="2">Poitou-Charentes</region>
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<title level="j" type="abbreviated">Philos. mag., A, Phys. condens. matter, Struct. defects mech. prop.</title>
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<term>Nanoindentation</term>
<term>Plasticity</term>
<term>Plasticity zone</term>
<term>Ruptures</term>
<term>Semiconductor materials</term>
<term>Transmission electron microscopy</term>
<term>Twinning</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Indentation</term>
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<front><div type="abstract" xml:lang="en">Nanoindentation has been used to explore the plasticity onset under contact loading in InP. Under low indenting loads ranging between 0.2 and 10 mN, fracture of the sample is avoided and plastic zones can be observed by transmission electron microscopy. The zone-size variation with load could be measured and analysed using the work of Johnson and of Kramer et al. The results were compared with those obtained in GaAs deformed under the same conditions. Furthermore, characterization of the dislocations was made and it was shown that the twinning formation in InP differed strongly from that in GaAs. The results are compared with previously reported arrangements obtained in the microindentation domain.</div>
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Low-load deformation of InP under contact loading; comparison with GaAs

Low-load deformation of InP under contact loading; comparison with GaAs

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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